Submicrom MOSFET

In a metal-Insulator-Semiconductor (MIS) diode, the terms of importance are surface space charge region, threshold voltage, depth of depletion region, inversion layer charge and inversion layer thickness. Metal oxide semiconductor field effect transistor (MOSFET) is widely used nowadays by electronics industry. Body effect, subthreshold current and subthreshold swing are the terms connected to long channel MOSFET. When a long channel MOSFET is used in an electronic circuit, terminal voltages are expressed with respect to the source terminal and the bulk, relative to the source, may be at a finite nonzero voltage. CMOS is complementary MOS where power dissipation is due to short circuit dissipation, dynamic dissipation, local capacitance, gate capacitance, overlap capacitance, diffusion capacitance and interconnect capacitance. Smaller dimension MOSFETs are known as submicrom MOSFETs. Here it is very difficult to establish an analytical relation between the device characteristics and the device parameters. Here threshold value changes due to the influence of short channel length effect and subsurface drain-induced barrier lowering.