Fabrication of p-n junction

P-n junction is an essential component of any semiconductor device. Any operation such as rectification, amplification, switching etc. is decided by the p-n junction characteristics. These characteristics mainly dependent on the fabrication conditions and processes involved. Thermal oxidization is a major step involved in the fabrication of p-n junctions where a wafer is heated and thereby chemical process is enhanced. To convert silicon to silicon dioxide, this method is used. Diffusion is another method extensively used in integrated circuit (IC) fabrication. The distribution of impurities in the sample material at any time during the diffusion is calculated from the solution of the diffusion equation by applying suitable boundary conditions.  Rapid thermal processing is a method nowadays used which includes rapid thermal oxidization, annealing of ion implantation and chemical vapour deposition. Ion implantation is a process in which a beam of impurity ions are forced to accelerate by applying high potential and is directed onto the surface of the semiconductor. Chemical vapour deposition, photolithography, etching, metallization etc. are some other processes involved in the p-n junction fabrication.